BYV27 200 PDF

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Glass passivated? High maximum operating temperature? Low leakage current? Excellent stability? Guaranteed avalanche energy absorption capability? Available in ammo-pack. UNIT 0. A ? A Nov 24 3 Philips Semiconductors Ultra fast low-loss controlled avalanche recti? UNIT 25 ns 50 ns? Device mounted on an epoxy-glass printed-circuit board, 1. Switched mode application. Product speci? Device mounted as shown in Fig.

Tamb oC Fig. VRRMmax during 1? A Product speci? Source impedance: 50? D max. G max. L min. The marking band indicates the cathode. This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains? Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?

Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the speci?

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Box , Tel. VB, Tel. Salcedo Village, P. Box Johannesburg , Tel. Vicente Pinzon, , 6th floor, S?

RICH, Tel. Philips Electronics N. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.


BYV27-50, BYV27-100, BYV27-150, BYV27-200 product information


14-52 IVSS PDF

General Semiconductor



BYV 27/200


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